ELECTRONIC DEVICES & CIRCUITS
1. Pure
semiconductors are poor conductor because all
valence electrons are in electron pairs.
2. Hall
effect device can be used to Multiply
two signals.
3. The
mobility of electrons in a semiconductor is defined as Drift velocity per unit electric field.
4. Reverse
recovery current in a diode depends on Forward
field current.
5. A
tunnel diode is A very heavily doped
p-n diode.
6. A
zenor diode works on the principle of
tunneling of charge carriers across the junction
7. IGFET
is the other name for MOSFET device.
8. JFET
can be used as Voltage variable resistor.
9. The
gain of bipolar transistor drops at high frequencies. This is because of the Inter-electrode transistor capacitances.
10. The
basic function of buried n+ layer in an n-p-n transistor fabricated in IC is to
Reduce the collector series
resistance.
11. Almost
all resistors are made in a monolithic integrated circuit During the emitter diffusion.
12. Why
is silicon dioxide layer used in ICs?
Ans:
To protect the surface of the chip from external contaminants and to allow
for
selective formation of the n and p regions by diffusion.
13. The
depletion region of a semiconductor diode is due to Migration of mobile charge carriers.
14. A
LED is basically a forward – biased
p-n junction.
15. A
PIN diode is frequently used as a Switching
diode for frequencies up to GHz range.
16. Avalanche
photo diodes are preferred over Pin diodes in optical communication systems
because of Large power handling
capacity.
17. Transition capacitance can also be
called as space charge, barrier
depletion layer.
18. Current caused due to flow of current
towards positive terminal is Drift current.
0 comments:
Post a Comment